GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors

High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions

We present five-stage bipolar-cascade vertical-cavity surface-emitting lasers emitting at 1.54 mm grown monolithically on an InP substrate by molecular beam epitaxy. A differential quantum efficiency of 120%, was measured with a threshold current density of 767 A/cm2 and voltage of 4.49 V, only 0.5 V larger than 530.8 V, the aggregate photon energy. Diffraction loss study on deeply etched pilla...

THz quantum cascade lasers with wafer bonded active regions.

We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the outpu...

InGaAs-AlAs and InGaAs-InGaP Strain-Compensated Heterostructures for Short-Wavelength Intersubband Transitions and Lasers

Carrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers

We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...

Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

We demonstrate an InAs/GaAs quantum dot sQDd laser based on a strain-compensated, three-stack active region. Each layer of the stacked QD active region contains a thin GaP sDao=−3.8% d tensile layer embedded in a GaAs matrix to partially compensate the compressive strain of the InAs sDao=7% d QD layer. The optimized GaP thickness is ,4 MLs and results in a 36% reduction of compressive strain in...